Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon
- 5 January 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1177, 175-185
- https://doi.org/10.1117/12.963332
Abstract
Low-loss waveguiding at X = 1.3 µm has been observed in a partially strained, 10-µm thick, single-crystal layer of Ge0,1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.Keywords
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