?-SiC MESFET's and buried-gate JFET's

1 September 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (9) , 428-430
https://doi.org/10.1109/edl.1987.26682

Abstract

β-SiC MESFET and buried-gate JFET structures have been fabricated and evaluated. Both structures employ an epitaxial n-on-p SiC layer grown by chemical vapor deposition on a p-type Si

Keywords

MESFETS
SILICON CARBIDE
POLYIMIDES
FABRICATION
SUBSTRATES
METALLIZATION
CONTACTS
HYDROGEN
POLLUTION MEASUREMENT
PLASMA MEASUREMENTS