Charged defect-pair luminescence in a-As2S3
- 14 November 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (21) , L821-L826
- https://doi.org/10.1088/0022-3719/12/21/003
Abstract
The first measurements of total light decay of photoluminescence (PL) of a chalcogenide glass in the time regime >100 ns are reported. The time decay is described by t-m exp(- nu 2t) where m=1- delta +T/T0, at temperature T with nu 2-1=1.4 ms, delta =0.1, T0=300K. These results allow a microscopic description of PL in a-As2S3 and indicate that PL may arise from charge-transfer de-excitation of defect pairs.Keywords
This publication has 12 references indexed in Scilit:
- Time-Resolved Photoluminescence Spectroscopy in AmorphousPhysical Review Letters, 1979
- Evidence for the neutrality of luminescence centres in chalcogenide glassesPhilosophical Magazine Part B, 1978
- Defect chemistry of lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- Luminescence with short decay time in arsenic chalcogenide glassesSolid State Communications, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Intrinsic decay lengths of quasimonochromatic phonons in a glass below 1 KPhysical Review B, 1976
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Radiative recombination in amorphous As2Se3Physica Status Solidi (a), 1973
- The energy gap law for radiationless transitions in large moleculesMolecular Physics, 1970