Galvanomagnetic Effects in p-Type Tellurium at Low Temperatures. III. – Impurity Band Conduction and Negative Magneto-resistance in Sb-Doped Crystals –
- 1 June 1973
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 34 (6) , 1548-1560
- https://doi.org/10.1143/jpsj.34.1548
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Galvanomagnetic Effects in p-Type Tellurium at Low Temperatures. IJournal of the Physics Society Japan, 1971
- Far-Infrared Cyclotron Resonance in p-Type TelluriumJournal of the Physics Society Japan, 1971
- Variational Calculation of Acceptor States in TelluriumJournal of the Physics Society Japan, 1971
- Inter‐valence band magneto‐absorption in telluriumPhysica Status Solidi (b), 1970
- Experimental determination of the shape of the hole Fermi surface in telluriumPhysics Letters A, 1969
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Theory of Localized Spins and Negative Magnetoresistance in the Metallic Impurity ConductionJournal of the Physics Society Japan, 1962
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Effect of Shear on Impurity Conduction in-Type GermaniumPhysical Review B, 1960