Intersubband absorption of GaAs/AlGaAs quantum wells in MBE grown mid-infrared slab waveguides
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (3) , 181-183
- https://doi.org/10.1109/68.50883
Abstract
A structure to enhance the absorbance due to intersubband transitions in GaAs/AlGaAs quantum wells is discussed. Mid-infrared slab waveguides including 30 quantum wells were grown using molecular-beam epitaxy (MBE). Photoluminescence experiments revealed an excellent uniformity of the samples. Absorption measurements over the whole 9-13.4- mu m spectral range were performed for the first time using the combination of CO/sub 2/ and NH/sub 3/ lasers. Effective absorbance due to intersubband transitions as high as 14 dB were measured for 3-mm-long waveguides. The waveguide structure is expected to be a good candidate for optoelectronic devices in the 10- mu m region.Keywords
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