Graphite thin-film formation by chemical-vapor deposition of o-methyl-diaryl ketones
- 4 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (1) , 46-48
- https://doi.org/10.1063/1.113068
Abstract
Two kinds of o-methyl-diaryl ketones, 2,6-di(2′,6′-dimethyl-1′-naphthyl)-naphthalene, (O), and 2-methyl-1,2′-naphthyl ketone, (I), were used as starting materials for chemical-vapor deposition (CVD). Raman-scattering measurements and x-ray diffraction analyses for the obtained films made it apparent that well-crystallized graphite films could be grown on Ni substrate kept above 900 and 600 °C by using the materials (O) and (I), respectively. In order to obtain the crystalline graphite by CVD, the Ni substrate was necessary and the supply rate of the starting material must be in an optimum range. When the supply rate is too large, the obtained film contained the disordered graphite structure.Keywords
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