Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma
- 1 August 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (8) , 1550-1555
- https://doi.org/10.1109/16.936559
Abstract
This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O/sub 2/ mixed high-density microwave-excited plasma at 400/spl deg/C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide.Keywords
This publication has 9 references indexed in Scilit:
- The Influence of Interconnect Line Patterns using Flat-Surface and Low-Dielectric-Loss Material under High Speed Signal PropagationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- High-integrity ultra-thin silicon nitride film grown at low temperature for extending scaling limit of gate dielectricPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma GenerationJapanese Journal of Applied Physics, 1999
- Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion BombardmentJapanese Journal of Applied Physics, 1999
- Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperaturesJournal of Applied Physics, 1999
- Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygenApplied Surface Science, 1997
- Influence of fluorine in BF2+ implantation on the formation of ultrashallow and low-leakage silicon p+n junctions by 450–500 °C annealingJournal of Applied Physics, 1997
- Ultra-low-temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidationApplied Physics Letters, 1994
- Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO2 interfacesApplied Physics Letters, 1991