Γ-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices

This publication has 18 references indexed in Scilit:

• Zone-folding effect in short-period (GaAs)n/(AlAs)nsuperlattices withnin the range 3–15
  Physical Review B, 1991
• Photoluminescence Properties of GaAs/AlAs Short-Period Superlattices
  Japanese Journal of Applied Physics, 1990
• Theory of electronic structure in superlattices
  Journal of Luminescence, 1989
• Piezospectroscopy of GaAs-AlAs superlattices
  Physical Review B, 1989
• Valley-mixing effects in short-period superlattices
  Physical Review B, 1989
• Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wells
  Physical Review B, 1989
• Pressure effect on indirect excitons in ultra-thin GaAs/AlAs superlattices
  Semiconductor Science and Technology, 1989
• Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structures
  Physical Review B, 1988
• Γ-X mixing in GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As and ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/AlAs superlattices
  Physical Review B, 1987
• X-point excitons in AlAs/GaAs superlattices
  Applied Physics Letters, 1986