Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers

• 1 December 1997
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 258-263, 1125-1130
• https://doi.org/10.4028/www.scientific.net/msf.258-263.1125

Abstract

Keywords

• ACCEPTOR
• DONORS
• GALLIUM NITRIDE (GAN)
• MOCVD
• PHOTOLUMINESCENCE (PL)
• TIME-RESOLVED PL