PHOTOCONDUCTIVITY IN SINGLE-CRYSTAL Pb1−xSnx Te
- 1 September 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (5) , 180-183
- https://doi.org/10.1063/1.1652561
Abstract
Photoconductivity at wavelengths up to 15 μ at 77°K and up to 20 μ at 4.2°K has been observed in Bridgman‐grown and subsequently annealed crystals of Pb1−xSnx Te which had carrier concentrations ranging from 2 to 8 × 1015 cm−3 with a mobility of about 3 × 104 cm2/V‐sec at 77°K. Detectivity values generally were between 108 and 109 cm/W‐sec1/2 at 77°K and greater than 1010 cm/W‐sec1/2 at 4.2°K. Photoconductive lifetimes of about 10−8 at 77°K and higher temperatures and 10−6 sec at 4.2°K were measured by means of light pulses from a GaAs diode laser.Keywords
This publication has 2 references indexed in Scilit:
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968
- Single Crystal Photoconductive Detectors in Lead SelenideJournal of the Electrochemical Society, 1961