Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy
- 1 March 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (2) , 696-698
- https://doi.org/10.1116/1.588138
Abstract
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