Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates

25 November 2004

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 40 (24) , 1547-1548
https://doi.org/10.1049/el:20046921

Abstract

The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers. The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.

Keywords

This publication has 3 references indexed in Scilit:

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
IEEE Electron Device Letters, 2003
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
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AlGaN/AlN/GaN high-power microwave HEMT
IEEE Electron Device Letters, 2001