Characterization of low temperature SiO2 and Si3N4 films deposited by plasma enhanced evaporation
- 1 March 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (2) , 208-214
- https://doi.org/10.1116/1.585595
Abstract
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