Quantitative analysis of chemical vapor deposition refractory metal silicides

Publisher Website
Google Scholar
Abstract
Chemical vapor deposition films of titanium and tungsten silicides have been characterized using secondary ion mass spectrometry (SIMS) and sputtered neutral analysis (SNA). SIMS data for bulk impurities and interfacial contaminants was quantified by reference to ion implant standards generated in situ in the ion microanalyzer. SNA analyses for film stoichiometry were also performed in the same instrument, ionization of the sputtered neutral flux being achieved by gas phase impact of primary ions. The films were found to contain significant levels of H, O, F, and Cl impurities, which largely migrated on annealing either out of the film or to a subsurface interface.

This publication has 0 references indexed in Scilit: