Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy
- 1 September 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (9) , 1207-1210
- https://doi.org/10.1007/bf02653075
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- MBE HgCdTe heterostructure p-on-n planar infrared photodiodesJournal of Electronic Materials, 1993
- Mercury cadmium telluride material requirements for infrared systemsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Effect of cleanings on the composition of HgCdTe surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992