Low dark current GaAs/AlAs graded-parameter superlattice PIN photodetector

5 June 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (12) , 636-637
https://doi.org/10.1049/el:19860436

Abstract

Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (−8 A/cm² at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The −3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.

Keywords

SPEED
RESPONSIVITY
BANDWIDTH
PHOTORESPONSE
ASYMMETRIC GAAS/ALAS SUPERLATTICE
SEMICONDUCTORS
SPECTRAL RESPONSE
MEASUREMENTS
GAAS P- N JUNCTION
GRADED SUPERLATTICE
SUPERLATTICE PIN PHOTODETECTOR
REVERSE-BIAS DARK CURRENTS
PHOTODIODES

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