Dangling Bonds in III–V Compounds
- 1 July 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (7) , 1232-1234
- https://doi.org/10.1063/1.1736209
Abstract
The model proposed by Gatos and Lavine [H. C. Gatos and M. C. Lavine, J. Electrochem. Soc. 107, 427 (1960)] for the dangling bonds of III–V compounds is discussed in the context of the available experimental facts and the objection advanced by Holt [D. B. Holt, J. Appl. Phys. 31, 2231 (1960)]. It is shown that the model as originally proposed is consistent with basic principles and experimental observations.This publication has 7 references indexed in Scilit:
- Antimony Edge Dislocations in InSbJournal of Applied Physics, 1961
- Filled and Empty Dangling Bonds in III-V CompoundsJournal of Applied Physics, 1960
- Damaged Layers and Crystalline Perfection in the {111} Surfaces of III–V Intermetallic CompoundsJournal of Applied Physics, 1960
- Etching and inhibition of the {111} surfaces of the III–V intermetallic compounds: InSbJournal of Physics and Chemistry of Solids, 1960
- Growth of InSb Crystals in the Polar DirectionJournal of Applied Physics, 1960
- Characteristics of the {111} Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1960
- Lone pair electronsJournal of Chemical Education, 1957