Transistor Forming Effects in n-Type Germanium
- 1 April 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 40 (4) , 445-448
- https://doi.org/10.1109/jrproc.1952.274038
Abstract
Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.Keywords
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