Photoinduced effects and metastability in amorphous semiconductors and insulators
- 1 December 1995
- journal article
- research article
- Published by Taylor & Francis in Advances in Physics
- Vol. 44 (6) , 475-588
- https://doi.org/10.1080/00018739500101576
Abstract
Amorphous semiconductors, being intrinsically metastable in nature, exhibit a wide variety of changes in their physical properties, particularly when photoinduced using bandgap illumination. This article reviews the photoinduced phenomena exhibited by amorphous semiconductors such as amorphous hydrogenated silicon (and other tetrahedrally coordinated materials) and chalcogenide glasses. Features exhibited in common by all types of amorphous semiconductors, whether in the experimentally observed photoinduced metastability or the theoretical models used to account for such behaviour, are stressed.Keywords
This publication has 268 references indexed in Scilit:
- Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:HSolid State Phenomena, 1995
- Glassy disordered systems: Topology, atomic dynamics and localized electron statesPhysics Reports, 1988
- The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous siliconPhysica B+C, 1983
- AC conduction of the heavily doped glow discharge amorphous silicon filmsJournal of Non-Crystalline Solids, 1980
- Thermal and optical bleaching in darkened films of chalcogenide vitreous semiconductorsPhysica Status Solidi (a), 1980
- Photoinduced optical anisotropy in chalcogenide vitreous semiconducting filmsPhysica Status Solidi (a), 1979
- Reversible photoinduced changes in the properties of chalcogenide vitreous semiconductorsMaterials Research Bulletin, 1978
- Photoluminescence in amorphous siliconPhysica Status Solidi (b), 1977
- Study of localized states in amorphous semiconductor chalcogenides by radiative recombinationPhysica Status Solidi (a), 1974
- Radiative recombination in amorphous As2Se3Physica Status Solidi (a), 1973