Structural Evaluation of Silicon‐on‐Insulator Fabricated by a Direct Wafer Bonding and Numerically Controlled Polishing Technique

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Abstract
The structural perfection of silicon‐on‐insulator wafers prepared by direct wafer bonding and a numerically controlled polishing technique have been analyzed by means of x‐ray topography and angle polishing/etching. Defects (mainly bubbles), excess stress at bonding boundaries, and polishing damage were all evaluated. The measurements revealed that no significant damage remained in the final 3 μm thick top Si layer, although the presence of random interfacial strain and accompanying stress of the order 106 dyne/cm2 remains, due to a nonplanar bonding interface.

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