Structure of dislocation bands produced by a bending stress in a low-stacking-fault energy f.c.c. material: Ag-1·2 at. % Sn

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Abstract
In low stacking-fault energy materials submitted to an external stress, dislocations cannot easily cross-slip and their movements are restricted in their primary planes. This results in the formation of dislocation bands giving rise to a heterogeneous deformation. Such bands developed by a bending stress in Ag-1·2 at.% Sn crystals have been analysed by X-ray transmission topography, and calculations carried out about the equilibrium distribution of dislocations within the bands.