p-n junction formation in InSb and InAs1−xSbx by metalorganic chemical vapor deposition
- 15 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 383-385
- https://doi.org/10.1063/1.95640
Abstract
p‐n junctions have been fabricated in InSb and InAs1−xSbx (0.4<x<0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut‐off wavelength in the 8–11‐μm range, thus providing a potential material system for detectors covering the 8–12‐μm range.Keywords
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