Tuning carbon nanotube bandgaps with strain

Preprint

4 February 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0211152

Abstract

We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a bandgap in a metallic NT and modify the bandgap in a semiconducting NT. Theoretical work predicts that bandgap changes can range between +100meV and -100meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.

Keywords

NANOTUBE BANDGAPS
ELECTROSTATICALLY
CARBON NANOTUBE
BAND STRUCTURE
TUNING CARBON
CHIRALITY
100MEV

All Related Versions

Version 1, 2002-11-08, ArXiv
Version 2, 2002-11-11, ArXiv
Version 3, 2003-02-04, ArXiv
Published version: Physical Review Letters, 90 (15), 156401.

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