Epitaxial C 49 ‐ TiSi2 Formation on (100)Si Substrate Using TiN x and Its Electrical Characteristics as a Shallow Contact Metallization

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Abstract
An investigation of the microstructural evolution of reactively sputtered , to the bilayer, on (100)Si substrate, has been carried out with emphasis on the crystalline nature of the . The nitrogen atoms in the film limit the available Ti atoms involved in the reaction with silicon and enhance the nitridation of the film. Hence, the thicknesses of both an amorphous interlayer or titanium silicide are much thinner than those from pure Ti film after rapid thermal annealing at various temperatures. Upon thermal annealing at above 600°C, the film was divided into the bilayered structure of , in which the thickness of was far thinner and extremely uniform, and the overlying TiN was relatively thick and uniform compared with the case of pure Ti. Moreover, the was epitaxially grown on (100)Si substrate with the structural relationship of , and . Also, the stable character of the epitaxial suppressed its transformation to C54 even after thermal annealing at 800°C. Since the thickness of the from the was relatively thin and extremely uniform, the electrical properties of the contacted shallow junctions were superior to those of the TiN/pure‐Ti contacted junctions.

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