Structure of pentacene thin films
- 22 November 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (21) , 4926-4928
- https://doi.org/10.1063/1.1826229
Abstract
Grazing incidence x-ray diffraction, x-ray reflectivity and atomic force microscopy have been performed to study the structure of pentacene thin films on oxidized Si substrates from submonolayer to multilayer coverages. The volume of the unit cell in the thin film phase is almost identical to that of the bulk phase, thus the molecular packing efficiency is effectively the same in both phases. The structure forming from the first monolayer remains the same for films at least 190 Å thick. The in-plane structure of the submonolayer islands also remains unchanged within a substrate temperature range of 0 < T sub < 45 ° C while the island size changes by more than a factor of 4.Keywords
This publication has 13 references indexed in Scilit:
- Early stages of pentacene film growth on silicon oxideOrganic Electronics, 2004
- Structural Characterization of a Pentacene Monolayer on an Amorphous SiO2 Substrate with Grazing Incidence X-ray DiffractionJournal of the American Chemical Society, 2004
- Electron diffraction of thin-film pentaceneJournal of Applied Crystallography, 2004
- Pentacene ultrathin film formation on reduced and oxidized Si surfacesPhysical Review B, 2003
- Organic Thin Film Transistors for Large Area ElectronicsAdvanced Materials, 2002
- On the Nature of Nonplanarity in the [N]PhenylenesChemistry – A European Journal, 1999
- Molecular beam deposited thin films of pentacene for organic field effect transistor applicationsJournal of Applied Physics, 1996
- Structural studies on highly ordered and highly conductive thin films of pentaceneJournal of Applied Physics, 1992
- Depth-Controlled Grazing-Incidence Diffraction of Synchrotron X RadiationPhysical Review Letters, 1986
- The crystal structure of hexacene, and a revision of the crystallographic data for tetraceneActa Crystallographica, 1962