AES, EELS and XPS study of ion‐induced GaAs and InP(110) surface and subsurface modifications
- 1 July 1990
- journal article
- microelectronics
- Published by Wiley in Surface and Interface Analysis
- Vol. 16 (1-12) , 59-64
- https://doi.org/10.1002/sia.740160115
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Composition depth profiles of oxidized silicon and sputtered GaAs from angle-resolved x-ray photoelectron spectroscopyJournal of Vacuum Science & Technology B, 1988
- Ion bombardment effects on the near‐surface composition during sputter profilingSurface and Interface Analysis, 1988
- An AES and ELS study of InP (100) surface subjected to argon ion bombardmentSurface and Interface Analysis, 1987
- Surface composition of (100)InP substrates bombarded by low energy Ar+ ions, studied by AES and EPESSurface Science, 1985
- On the role of Gibbsian segregation in causing preferential sputteringSurface and Interface Analysis, 1985
- Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contactsJournal of Vacuum Science & Technology B, 1984
- Systematics of interfacial chemical reactions on InP(110)Journal of Vacuum Science & Technology B, 1984
- Surface composition changes in GaAs due to low-energy ion bombardmentSurface Science, 1981
- Preferential sputtering from disordered GaAsJournal of Vacuum Science and Technology, 1981
- On the problem of whether mass or chemical bonding is more important to bombardment-induced compositional changes in alloys and oxidesSurface Science, 1980