AlGaSb/GaSb diodes grown by molecular-beam epitaxy
- 26 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1117-1119
- https://doi.org/10.1063/1.106362
Abstract
AlGaSb p‐i‐n diodes have been grown by molecular‐beam epitaxy on (100) and (111) B substrates, with the devices grown on (111)B substrates exhibiting a higher breakdown voltage and lower leakage current than those grown on (100) substrates. The superior performance of devices fabricated on (111) substrates is attributed to the improved incorporation of Sb during growth on the Sb‐rich (111)B face. Increasing the Sb incorporation reduces the density of p‐type native defects and thus improves intrinsic layer quality. It is also shown that the best surface morphology is obtained by utilizing slightly misoriented (111)B substrates.Keywords
This publication has 12 references indexed in Scilit:
- Native defects in the AlxGa1−xSb alloy semiconductorJournal of Applied Physics, 1990
- Band-Gap Engineering: From Physics and Materials to New Semiconductor DevicesScience, 1987
- Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratioIEEE Transactions on Electron Devices, 1983
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- Resonant enhancement of impact in Ga1−xAlxSbApplied Physics Letters, 1980
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970
- GaSb Prepared from Nonstoichiometric MeltsJournal of the Electrochemical Society, 1966
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- An investigation into the apparent purity limit in GaSbJournal of Physics and Chemistry of Solids, 1964