SPECIFIC CONTRIBUTIONS OF SIMS AND XPS TO STUDIES OF THERMAL OXIDE FILM
Open Access
- 1 February 1984
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 45 (C2) , C2-647
- https://doi.org/10.1051/jphyscol:19842151
Abstract
SIMS give specific informations on the diffusion of a tracer in growing oxide films and the depth distribution of impurities in low concentrations in the films. The valency of these dopants can be determined by XPS, thus permitting to explain their influence on diffusion processesKeywords
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