Silicon-coupled Josephson junctions and super-Schottky diodes with coplanar electrodes

1 November 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (11) , 1394-1397
https://doi.org/10.1109/t-ed.1981.20620

Abstract

Superconducting devices with coplanar electrodes have been fabricated using electron-beam lithography to define the smallest feature. The devices each consist of two Pb-In alloy electrodes, 20 µm wide, deposited on a clean, degenerately doped silicon substrate. The two electrodes are separated by a thin (100-300-nm) gap. Electron-beam lithography is used to define the gap, and sputter etching to remove the underlying alloy film. Depending on the width of the gap and the condition of the metal-semiconductor interface, these devices displayed either Josephson or super-Schottky diode behavior. The Josephson devices show a high degree of robustness and hadI_{c}Rproducts in the range 200-800 µV at 4.2 K. The super-Schottky diodes had current sensitivities S in the range 1000-1300 V-1when measured at 4.2 K.

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