Static and dynamic behaviour of transistors in the avalanche region
- 1 April 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 6 (2) , 83-87
- https://doi.org/10.1109/jssc.1971.1049655
Abstract
The behavior has been studied assuming that the transistor is acting as a nonlinear negative resistance dipole, defined from its I-V characteristics. A simple method has been obtained to plot the static characteristic with good accuracy. Then the nonlinear differential equations for a simple switching circuit are graphically solved and the theory is compared with the experimental results.Keywords
This publication has 5 references indexed in Scilit:
- Direct current-voltage characteristics of transistors in the avalanche regionIEEE Journal of Solid-State Circuits, 1968
- Study of Transistor Switching Circuit Stability in the Avalanche RegionIEEE Journal of Solid-State Circuits, 1967
- Variable-Width Pulse Generation Using Avalanche TransistorsIEEE Transactions on Instrumentation and Measurement, 1963
- Avalanche Transistor CircuitsReview of Scientific Instruments, 1961
- Physical Principles of Avalanche Transistor Pulse CircuitsProceedings of the IRE, 1959