The growth by MOVPE and characterisation of CdxHg1−xTe
- 31 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 107-115
- https://doi.org/10.1016/0022-0248(81)90277-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A study of the growth of HgTe from the vapourJournal of Crystal Growth, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Vapor phase growth of Hg1−xCdx Te epitaxial layersJournal of Electronic Materials, 1978
- Hg-Cd-Te phase diagram determination by high pressure refluxJournal of Electronic Materials, 1976
- Influence of the mercury vapor pressure on the isothermal growth of HgTe over CdTeJournal of Applied Physics, 1975
- Mercury pressure over HgTe and HgCdTe in a closed isothermal systemJournal of Applied Physics, 1975
- Vacuum Deposition of Hg0.8Cd0.2TeJournal of Applied Physics, 1971
- Growth and Properties of Hg1−xCdxTe Epitaxial LayersJournal of Applied Physics, 1969
- Partial pressures of Hg(g) and Te2(g) in Hg-Te system from optical densitiesJournal of Physics and Chemistry of Solids, 1965