Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5) , 707-711
- https://doi.org/10.1109/T-ED.1986.22555
Abstract
A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.Keywords
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