18Gb/s Optical IO: VCSEL Driver and TIA in 90nm CMOS

1 June 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 276-277
https://doi.org/10.1109/vlsic.2007.4342749

Abstract

An 18 Gb/s optical data rate is achieved with a commercial GaAs VCSEL by applying rising and falling edge pre-emphasis with a 90 nm CMOS driver. The pre-emphasis pulse shape can be digitally adjusted with time resolution less than one bit period. The TIA receiver has cross-coupled cascodes to increase the amplifier gain/bandwidth and operates at 12.5 Gb/s to 18 Gb/s depending on the input capacitance.

Keywords

VERTICAL CAVITY SURFACE EMITTING LASERS
OPTICAL RECEIVERS
OPTICAL PULSE SHAPING
PULSE AMPLIFIERS
STIMULATED EMISSION
GALLIUM ARSENIDE
DRIVER CIRCUITS
SHAPE
OPTICAL AMPLIFIERS
BANDWIDTH

This publication has 2 references indexed in Scilit:

High-Speed Transmitters in 90nm CMOS for High-Density Optical Interconnects
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2006
High-speed 2D VCSEL arrays at 990nm for short reach interconnects
Published by SPIE-Intl Soc Optical Eng ,2005