Coherent TO phonon relaxation in GaAs and InP
- 15 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (23) , 15614-15618
- https://doi.org/10.1103/physrevb.55.15614
Abstract
Relaxation of coherent TO phonons is investigated in bulk GaAs and InP using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements were performed as a function of the crystal temperature in the range 10–300 K permitting determination of the dominant TO phonon relaxation channels. The experimental results are consistent with TO phonon decay into a TA and a LA phonon in GaAs while in InP decay into two identical energy LA phonons dominates at low temperatures.Keywords
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