Transport and recombination in a-Si:H p-i-n diodes under forward bias conditions
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 551-554
- https://doi.org/10.1016/0022-3093(93)90611-z
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Analysis of double injection transients in amorphous silicon p-i-n diodesJournal of Applied Physics, 1992
- Electroluminescence: A study of non-geminate radiative and non-radiative bulk recombination in a-Si:HJournal of Non-Crystalline Solids, 1991