Laser annealing of ohmic contacts on GaAs
- 1 April 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (7) , 562-564
- https://doi.org/10.1063/1.92413
Abstract
Backside irradiation through the substrate with a Q‐switched Nd:glass laser (l = 1.06 mm) has been used to produce Au‐Ge ohmic contacts on GaAs. Conventional thermal alloying was done for comparison. The structure of the contacts was investigated by 2‐MeV He‐ion Rutherford backscattering technique, photographs, and I‐V characteristic measurements. The irradiated Au‐Ge contacts exhibit good ohmic contact behavior and good surface morphology. Ohmic contacts with specific contact resistance rc less than 2×10−5 W cm2 have been measured within the laser energy density of 0.3–0.5 J/cm2, while the thermally alloyed contacts yielded rc = 1.3×10−4 W cm2.Keywords
This publication has 3 references indexed in Scilit:
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- Formation of ohmic contacts to III–V semiconductors, using a laser beamSolid-State Electronics, 1974
- Models for contacts to planar devicesSolid-State Electronics, 1972