An investigation of the sensitivity of lateral magnetotransistors
- 1 March 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (3) , 51-53
- https://doi.org/10.1109/EDL.1983.25644
Abstract
An investigation of the magnetic-field sensitivity of lateral, double base contact p-n-p magnetotransistor is reported. At very low collector current levels the sensitivity is an exponential function of the base current and rises up to 30 A/A.T at 1 T. At larger collector currents sensitivity decreases drastically and approaches the usual value of less then 1.5 A/A.T. This behaviour is explained in terms of a Hall-type voltage, which is generated in the base region and causes a magnetic-field-modulated injection of carriers.Keywords
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