Strain relaxation and its effect on radiation-induced interface traps in thin rapid thermally grown high-temperature oxides
- 15 January 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 1113-1115
- https://doi.org/10.1063/1.347382
Abstract
The radiation response of metal‐oxide‐semiconductor capacitors containing thin (50–150 Å) high‐temperature (1200 °C) oxides grown by rapid thermal oxidation (RTO) and conventionally furnace‐grown (800 °C) oxides are investigated by means of capacitance‐voltage techniques. The results indicate that the Si/SiO2 interface is largely controlled by the oxide growth process. The prominent interface‐trap state at Emg+0.2 eV, which characterizes furnace grown oxides is strongly suppressed in high‐temperature RTO oxides. The improved radiation hardness is attributed to strain relaxation by viscous oxide flow which occurs during oxidation at 1200 °C.This publication has 16 references indexed in Scilit:
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