Double Channel AlGaN/GaN Heterostructure Field Effect Transistor
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Piezoeffect and gate current in AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 1997
- GaN And Related Materials For High Power ApplicationsMRS Proceedings, 1997
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993