Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy
- 1 February 1998
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 264-268, 681-684
- https://doi.org/10.4028/www.scientific.net/msf.264-268.681
Abstract
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