Carbon nanotube population analysis from Raman and photoluminescence intensities

In the absence of standard single-wall carbon nanotube samples with a well-known $(n,m)$ population, we provide both a photoluminescence excitation (PLE) and resonance Raman scattering (RRS) analysis that together can be used to check the calculations for PLE and RRS intensities for carbon nanotubes. We compare our results with available models and show that they describe well the chirality dependence of the intensity ratio, confirming the differences between type 1 and type 2 semiconducting tubes $\left[\right(2n+m\left)\mathrm{mod}3\right]=1\mathrm{and}2$ , respectively, and the existence of a node in the radial breathing mode intensity for type 2 carbon nanotubes with chiral angles between 20° and 25°.