Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

• 17 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 299-302
• https://doi.org/10.4028/www.scientific.net/msf.353-356.299

Abstract

Keywords

• DEVICE STABILITY
• DISLOCATION
• STACKING FAULT
• SYNCHROTRON TOPOGRAPHY