Microwave characteristics of high f/sub max/ low noise thin film silicon-on-sapphire MOSFETs

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 18-19
https://doi.org/10.1109/soi.1995.526439

Abstract

We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high f/sub max/, and low F/sub min/. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have f/sub max/ values above 60 GHz and 40 GHz, respectively. The minimum noise figure, F/sub min/ was below 1 dB at 2 GHz for both devices. Both the f/sub max/ and F/sub min/ values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance.

Keywords

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