Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters

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Abstract
To reduce the switching power losses of SiC bipolar devices, an electron irradiation lifetime control method was investigated and was successfully applied to the development of 200kVA full SiC inverters, in which SiCGTs and SiC pn diodes irradiated electrons were used at the condition required to minimize inverter power loss.

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