Identification of the Initial-Stage Oxidation Products on Si(111)-(7×7)
Open Access
- 1 February 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (5) , 968-971
- https://doi.org/10.1103/physrevlett.82.968
Abstract
Density functional theory calculations are used to study the initial-stage adsorption of molecules on the surface. Contrary to experimental suggestions, we find no evidence of metastable molecular states on this surface, i.e., molecules dissociate spontaneously without any barrier. Our electronic and vibrational analysis reveals that the resulting atomic-oxygen products can explain the “molecular” features reported in previous experiments.
Keywords
This publication has 24 references indexed in Scilit:
- Molecular precursor of oxygen on Si(111)7 × 7 surfaceSurface Science, 1996
- Site Specific and State Selective Photofragmentation of Molecular Oxygen on Si(111)-(7 × 7)Physical Review Letters, 1994
- Kinetics of oxygen dissociation on Si(111)7×7 investigated with optical second-harmonic generationPhysical Review B, 1994
- Atom-resolved surface chemistry: The early steps of Si(111)-7×7 oxidationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Successive oxidation stages of adatoms on the Si(111)7×7 surface observed with scanning tunneling microscopy and spectroscopyPhysical Review B, 1990
- Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopyThe Journal of Physical Chemistry, 1990
- Initial stages of oxygen adsorption on Si(111): The stable statePhysical Review B, 1989
- Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111)Physical Review Letters, 1985
- Oxidation of the Si(111) (7×7) surface: Electron energy loss spectroscopy, low-energy electron diffraction, and Auger electron spectroscopy studiesThe Journal of Chemical Physics, 1985
- Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfacesApplied Physics A, 1982