Sub-Micron Pattern Control Technology for Variable-Shaped EB Lithography

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Abstract
This paper discusses the problems encountered in the sub-micron pattern control technology that needs both the variable-shaped EB system and multilayer resist process. These problems are shaped beam stitching error, heating and beam defocusing as a function of beam size and resist pattern deformation caused by beam stitching error as a function of resist thickness. An attempt is made to calculate temperature rises expected in multilayer resist as a function of the buffer layer thickness for different EB sizes. The beam size dependent problems are resolved to develop new algorithms for partitioning of lithographic patterns. Experimental results verifying the usefulness of such algorithms are also presented.

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