Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L482-484
- https://doi.org/10.1143/jjap.23.l482
Abstract
Trench coverage of polysilicon deposited under low pressure using a SiH4–PH3–He system is investigated. The trench coverage becomes poorer with increasing SiH4 or PH3 partial pressure. This phenomenon is explained by assuming the contribution of Si2H6 formed by the polymerization of SiH4 in the gas phase to polysilicon deposition.Keywords
This publication has 2 references indexed in Scilit:
- Depletion trench capacitor technology for megabit level MOS dRAMIEEE Electron Device Letters, 1983
- Design of Primary and Secondary CellsJournal of the Electrochemical Society, 1965