Electromigration-induced failure of GaNmulti-quantum well light emitting diode
- 11 May 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (10) , 908-910
- https://doi.org/10.1049/el:20000657
Abstract
The reliability characteristics of a multi-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities have been investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In.Keywords
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