Characteristics of Bloch line memory read operation in 2 mu m bubble material
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 26 (5) , 2517-2519
- https://doi.org/10.1109/20.104782
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Characteristics for Bloch line memory with field access schemeIEEE Transactions on Magnetics, 1989
- Computer simulation for wall merging process in Bloch line read operationIEEE Transactions on Magnetics, 1988
- Chip organization of Bloch line memoryIEEE Transactions on Magnetics, 1986
- Dynamic behavior of plane wall in bubble garnet films (computer simulation)IEEE Transactions on Magnetics, 1984
- A new-ultra-density solid state memory: Bloch line memoryIEEE Transactions on Magnetics, 1983
- Formation and Punch-Through of Horizontal Bloch Line in A Stripe Domain WallJapanese Journal of Applied Physics, 1979
- Computations of the micromagnetic dynamics in domain wallsJournal of Applied Physics, 1978
- Statics and dynamics of domain walls in bubble materialsJournal of Applied Physics, 1975