Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode

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Abstract
The impurity‐related and band‐to‐band photoluminescence of a commercially available III–N blue‐light‐emitting diode is time‐resolved using femtosecond excitation and streak‐camera detection. Photoluminescence decay times are reported and stimulated band‐to‐band emission is observed. The data are compared to a simple recombination model capable of explaining the measured behavior of the photoluminescence.